ADVANCED POWER RECTIFIER CONCEPTS

Advanced Power Rectifier Concepts provides an in-depth treatment of the physics of operation of advanced power rectifiers. Analytical models for explaining the operation of all the advanced power rectifier devices are developed. Results of numerical simulations are provided for additional insight into device physics and for validation of various analytical models. Drawing upon years of practical experience and using numerous examples and illustrative designs, B. Jayant Baliga discusses: Analytical formulations for design and analysis of structures such as the Junction Barrier controlled Schottky (JBS) Rectifier and the Merged PiN Schottky (MPS) Rectifier Numerical simulations to explain the operating physics and validate the models The role of silicon carbide in the structural design and development of power rectifiers Advanced Power Rectifier Concepts will be of interest to practicing engineers in the power semiconductor community and can also serve as a reference for graduate students and faculty doing research in an academic environment. Selected sections of the book can be used as supplementary teaching material for courses taught using the textbook 'Fundamentals of Power Semiconductor Devices' by the author. During the last decade, many new concepts have been proposed for improving the performance of power rectifiers and transistors. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. Advanced Power Rectifier Concepts provides an in-depth treatment of the physics of operation of advanced power rectifiers. Analytical models for explaining the operation of all the advanced power rectifier devices will be developed. The results off numerical simulations will be provided to provide additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and provide greater insight into the device operation. ADVANCED POWERRECTIFIER CONCEPTS 1 Dedication 5 Preface 6 Contents 11 Chapter 1: Introduction 15 Chapter 2: Schottky Rectifiers 28 Chapter 3: Junction Barrier Controlled Schottky Rectifiers 42 Chapter 4: Trench Schottky Barrier Controlled Schottky Rectifiers 88 Chapter 5: Trench MOS Barrier Controlled Schottky Rectifiers 129 Chapter 6: P-i-N Rectifiers 163 Chapter 7: MPS Rectifiers 207 Chapter 8: SSD Rectifiers 299 Chapter 9: Synopsis 341 Professor Baliga 357 Index 361 Front Matter....Pages i-xvi Introduction....Pages 1-13 Schottky Rectifiers....Pages 15-28 Junction Barrier Controlled Schottky Rectifiers....Pages 29-74 Trench Schottky Barrier Controlled Schottky Rectifiers....Pages 75-115 Trench MOS Barrier Controlled Schottky Rectifiers....Pages 117-150 P-i-N Rectifiers....Pages 151-194 MPS Rectifiers....Pages 195-286 SSD Rectifiers....Pages 287-328 Synopsis....Pages 329-344 Back Matter....Pages 345-352 Many fresh concepts have been proposed for improving the performance of power rectifiers and transistors. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. This title provides a treatment of the physics of operation of advanced power rectifiers