Graphene is considered to be the pioneer two-dimensional material with an immense potential of research and industrial growth. It constitutes the foundation for novel electronic applications of nanomaterials. Successful segregation of single-layered graphene has instigated a lot of curiosity in unraveling the prospects of its use in synthesis of various electronic and electrical devices, predominantly because of its remarkable electronic characteristics. This book primarily focuses on practical uses of graphene determined by its unique characteristics. The mechanisms of thermal and electric transport in graphene, quantum dots, interface phenomena, non-equilibrium states, dissipation, and scattering are thoroughly discussed in the book. Detailed evaluations and comparisons between theoretical and experimental aspects of graphene based materials are illustrated with a range of practical examples. This book also emphases on carbon based nanomaterials (graphene) as novel materials for applications in modern electrical and electronic devices. The growth and applications of novel graphene technology are also discussed in the book. As new materials and new devices, nano-graphene materials are estimated to be pioneer materials that would surpass the conventional materials in terms of performance as well as cost. This book familiarizes the audience with latest accomplishments of graphene devices, and technological growth. The book is mainly focused at a broad range of audiences ranging from undergraduate students and doctoral fellows to industrial engineers and researchers. However, this book can be used specifically by materials scientists, chemists and physicists to expand their knowledge about synthesis, characterization and applications of graphene based materials. Cover Half Title Graphene Devices Copyright About the Author Table of Contents List of Figures List of Tables List of Abbreviations Preface 1. Fundamentals of Graphene Contents 1.1. Introduction 1.2.Graphene and Graphene Oxide (Go) 1.2.1. Preparation of Graphene From Graphene Oxide (GO) 1.2.2. Isolation of Pristine Graphene Monolayers 1.2.3. Large Scale Production of GO by Langmuir-Blodgett (LB) Methods 1.2.4. Other Methods of Graphene Production 1.3 Functionalization 1.3.1. Covalent Functionalization of Graphene Basal Plane 1.3.1.1.Hydrogenation 1.3.1.2.Fluorination 1.3.1.3.Oxidation 1.3.1.4.Free Radical Addition 1.3.1.5.Cycloaddition Reaction 1.3.2. Asymmetrical Functionalization of Graphene Basal Plane 1.3.2.1. Functionalization of Graphene Edges 1.3.2.2. Functionalization of Pristine Graphene Edge Sites 1.3.2.3. Functionalization of CMG Edge Sites 1.3.3. Noncovalent Functionalization of Graphene 1.3.3.1. Conjugated Compounds 1.3.3.2. Polymers 1.4 Doping 1.4.1. Surface Transfer Doping 1.4.2. Substitutional Doping 1.4.2.1. Nitrogen-Doping 1.4.2.2. Boron Doped Graphene 1.5. Characterization of Graphene 1.5.1. Microscopic Observation 1.5.2. Raman Spectroscopy 1.5.3. Thermogravimetric Analysis (TGA) 1.5.4. Optical Properties of Graphene 1.5.5. X-Ray Diffraction (XRD) Pattern References 2. Synthesis Methods of Graphene and Its Properties Contents 2.1. Introduction 2.2. The Properties and Applications of Graphene 2.3. Synthesis 2.4. Structure Defects 2.5. The Classification of Graphene 2.6. The Vision of Graphene 2.7. Graphene as a Biomaterial References 3. Applications of Graphene-Based Materials in Electronic Devices Contents 3.1. Introduction 3.2. Graphene and Gnrs 3.3. Graphene Devices 3.3.1. Electro-Optic Devices 3.3.1.1. Electronic Fiber 3.3.1.2. Transistors with High Ion/Ioff 3.3.1.3. Tilted p-n Junction Switches 3.3.2. Radio-Frequency Transistors 3.3.3. Thermal Transport Device 3.4. GNR Devices 3.4.1. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) 3.4.2. Tunneling Transistors 3.4.3. Resonant Tunneling Devices 3.4.4. Interconnects 3.5. Spintronic Devices 3.5.1. Magnetoresistance (MR) Device 3.5.2. Spin Diode 3.5.3. Spin-Logic Device 3.5.4. Spin Transistor 3.5.4.1. Bipolar Junction Transistor (BJT) Type 3.5.4.2. FET Type 3.5.5. Spin Caloritronic Device References 4. Graphene-Based Electronic Sensors Contents 4.1. Introduction 4.2. Working Principle and Device Configuration 4.3. Choice of Graphene Materials 4.4. Graphene-Based Gas Sensors 4.5. Graphene-Based Ph Sensors And Biosensors 4.6. Graphene-Based Heavy-Metal Sensing References 5. Synthesis and Application of Graphene for Solar Cells Contents 5.1. Introduction 5.2. Graphene Synthesis: A Brief Overview 5.2.1. Mechanical Exfoliation 5.2.2. Chemical Exfoliation 5.2.3. Chemical Synthesis and Functionalization 5.2.4. Thermal CVD Process 5.2.5. Epitaxial Growth 5.2.6. Graphene Transfer 5.2.7. Graphene as Transparent Conducting Electrodes 5.3. Graphene in Solar Cells 5.3.1. Graphene for Solid-State Solar Cells 5.3.2. Graphene-Based DSSCs 5.3.2.1. Dye-Sensitized Solar Cells 5.3.2.2. Graphene as Photoanode 5.3.2.3. As Cathode Materials 5.3.3. Graphene-Based Quantum Dot-Sensitized Solar Cells 5.3.4. Graphene-Based OPVs References 6. Introduction to Graphene Photonics Contents 6.1. Introduction 6.2. Photodetectors 6.3. Electro-Optic Modulation 6.4. Polarizers 6.5. Plasmonics 6.6. Graphene as a Nonlinear Optical Device References 7. Applications of Nanocomposites Based on Graphene in Supercapacitors Contents 7.1. Introduction 7.2. Synthesis Method for the Electrode Materials 7.2.1. Electrodeposition/Electro-Polymerization 7.2.2. In Situ Polymerization 7.2.3. Direct Coating 7.2.4. Chemical Vapor Deposition (CVD) 7.3. Substrate Materials for Lithe Supercapacitors 7.4. Graphene Nanocomposite Centered on Kinds of Electrode Materials 7.4.1. Binder/Additives Added Electrodes 7.4.1.1. Graphene Electrodes/Additives 7.4.1.2. Graphene Electrodes/Binder 7.4.2. Binder-Less Electrodes 7.4.2.1. Pure Electrode of Graphene 7.4.2.2. Symmetrical Supercapacitor References 8. Fundamentals of Graphene Transistors Contents 8.1. Introduction 8.2. Fet Physics 8.3. Graphene Properties Relevant to Transistors 8.3.1. Bandgap 8.3.2. Mobility 8.3.3. High-Field Transport 8.4. Mosfet Graphene Transistors References Index Cover back