Lateral Power Transistors in Integrated Circuits (Power Systems)

The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated. Front Matter....Pages i-xix Introduction....Pages 1-4 Demand for Power Electronic Systems and Radio-Frequency Applications....Pages 5-23 Power Electronic and RF Amplifier Circuits....Pages 25-40 Power Semiconductor Devices in Power Electronic Applications....Pages 41-74 Modern MOS-Based Power Device Technologies in Integrated Circuits....Pages 75-103 Lateral Power Transistors with Charge Compensation Patterns....Pages 105-131 Lateral Power Transistors with Trench Patterns....Pages 133-151 Lateral Power Transistors Combining Planar and Trench Gate Topologies....Pages 153-175 Lateral Power Transistors on Wide Bandgap Semiconductors....Pages 177-208 Summary of Integration Concepts for LDMOS Transistors....Pages 209-219 Back Matter....Pages 221-223 4.4 Aspects of Integration of Power Transistors in ICs4.4.1 Advantages of LDMOS Transistors in Integrated Circuits; 4.4.2 Limitations and Drawbacks of LDMOS Transistors in Integrated Circuits; 4.5 Safe Operating Area for Lateral Power Transistors; 4.6 More-Moore and More-than-Moore Integration Methodology in Smart-Power ICs and RF Amplifier Technologies; References; 5 Modern MOS-Based Power Device Technologies in Integrated Circuits; 5.1 History of Lateral Power Transistor Development; 5.2 LDMOS Transistors for Smart Power ICs; 5.2.1 Low Drift Region Resistance with ``Reduced Surface Field'' 3.2 Circuits for RF Amplifiers3.2.1 Amplifier Fundamentals; 3.2.2 Amplifier Classes; 3.3 Application-Specific Requirements for Power Transistors; 3.4 Summary of Power Semiconductor Device Requirements; References; 4 Power Semiconductor Devices in Power Electronic Applications; 4.1 Introduction to Power Semiconductor Devices; 4.2 Trade-Offs and Figures-of-Merit for Power Semiconductor Devices; 4.2.1 Static Power Losses: On-State Resistance and Blocking Voltage; 4.2.1.1 Drift Region Resistance under Non-punch Through Condition; 4.2.1.2 Drift Region Resistance in Punch-Through Condition 4.2.2 Dynamic Losses: Device Capacitances and Switching Frequency4.2.2.1 Dynamic Losses from Switching in Switch Mode Converters; 4.2.2.2 Dynamic Losses from Charging in Switch Mode Converters; 4.2.3 Switching Frequency and Transistor Gain; 4.2.4 Switching Frequency and Output Power; 4.2.5 Power Densities and Long Term Stability; 4.2.6 Design and Development of LDMOS Transistors in Smart Power ICs; 4.3 Fundamental Device Topologies of Lateral Power Semiconductor Devices; 4.3.1 Lateral Power MOSFETs in Smart-Power ICs; 4.3.2 LDMOS Transistors Optimized for Radio-Frequency Applications Preface; Contents; Abbreviations; 1 Introduction; References; 2 Demand for Power Electronic Systems and Radio-Frequency Applications; 2.1 Semiconductors in Integrated Power Electronics and Radio Frequency Amplifiers; 2.1.1 Impact on Integrated Energy Conversion Systems; 2.1.2 Impact on Information Technologies; 2.2 Integrated Power Electronic and Radio-Frequency Applications; 2.2.1 Switch-Mode Power Supplies for DC-to-DC Conversion; 2.2.2 Motor Control and Drive Inverters for DC-to-AC Conversion; 2.2.3 Power Amplifiers for Mobile Communication Base Stations and Handhelds 2.2.4 Transceivers for Wireless-LAN Communication2.3 Requirements for Power Electronic and RF Amplifier Systems; 2.3.1 ; 2.3.2 Size and Weight of ; 2.3.3 ; 2.3.4 ; 2.3.5 ; 2.3.6 ; 2.3.7 ; 2.3.8 ; 2.3.9 Comparison of Requirements; References; 3 Power Electronic and RF Amplifier Circuits; 3.1 Circuits for Energy Conversion and Control; 3.1.1 Switch-Mode Converter Circuits; 3.1.2 Benefits and Drawbacks of Switch-Mode Conversion; 3.1.3 Direct-Current Conversion and Solid-State Rectification: Buck and Boost Converters; 3.1.4 Power Inverters: Half and Full Bridge Topologies This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies