Silicon Integrated Circuits. Part A. Applied Solid State Science Supplement 2.

Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics. This book is divided into three chapters—physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated. This publication is a good source for students and individuals interested in MOS-based integrated circuits. pt. A. Physics of the MOS transistor / John R. Brews. Nonvolatile memories / Yoshio Nishi and Hisakazu Iizuka. The properties of silicon-on-sapphire substrates, devices, and integrated circuits / Alfred C. Ipri pt. B. Physics and chemistry of impurity diffusion and oxidation of silicon / Richard B. Fair. Silicon power field controlled devices and integrated circuits / B. Jayant Baliga pt. C. Transient thermal processing of silicon / G.K. Celler and T.E. Seidel. Reactive ion-beam etching and plasma deposition techniques using electron cyclotron resonance plasmas / Seitaro Matsua. Physics of VLSI processing and process simulation / W. Fichtner. Content: Applied Solid State Science , Page ii Front Matter , Page iii Copyright , Page iv Preface , Pages ix-x , Dawon Kahng List of Contributors , Page vii Physics of the MOS Transistor , Pages 1-120 , JOHN R. BREWS Nonvolatile Memories , Pages 121-251 , YOSHIO NISHI, HISAKAZU IIZUKA The Properties of Silicon-on-Sapphire Substrates, Devices, and Integrated Circuits , Pages 253-395 , ALFRED C. IPRI Author Index , Pages 397-406 Subject Index , Pages 407-416