Smart Power Integration

Smart power integration is at the crossroads of different fields of electronics such as high and low power, engine control and electrothermal studies of devices and circuits. These circuits are complex and are heavily influenced by substrate coupling, especially where 3D integration is concerned. This book provides an overview of smart power integration, including high voltage devices, dedicated and compatible processes, as well as isolation techniques. Two types of integration are highlighted: modular or hybrid integration, together with compatible devices such as the insulated gate bipolar transistor (IGBT); and monolithic integration, specifically through the paradigm of functional integration. Smart Power Integration outlines the main MOS devices for high voltage integrated circuits, and explores into the fields of codesign, coupling hardware and software design, including applications to motor control. Studies focusing on heat pipes for electronics cooling are also outlined. Cover 1 Half-Title Page 3 Title Page 5 Copyright Page 6 Contents 7 Preface 11 1. Overview of Smart Power Integration 13 1.1. Introduction 13 1.2. Smart PIC applications 14 1.2.1. Flat panel displays 16 1.2.2. Computer power supplies and disk drivers 16 1.2.3. Variable speed motor drives 16 1.2.4. Factory automation 16 1.2.5. Telecommunications 17 1.2.6. Appliance controls 17 1.2.7. Consumer electronics 17 1.2.8. Lighting controls 17 1.2.9. Smart homes 18 1.2.10. Aircraft electronics (Avionics) 18 1.2.11. Automotive electronics 18 1.3. Historical view of the MOS power devices 18 1.4. Smart PIC fabrication processes 21 1.4.1. Dedicated processes 21 1.4.2. Compatible processes 22 1.5. Insulation techniques 22 1.5.1. Self-insulation 22 1.5.2. Dielectric insulation 23 1.5.3. Junction insulation 23 1.5.4. Advanced junction insulation techniques 24 1.6. Motivation of the book 25 2. Modular or Hybrid Integration 29 2.1. Introduction 29 2.2. IGBT technology evolution 30 2.2.1. IGBT presentation 30 2.2.2. Epitaxial structure with buffer layer and reduction of carrier 42 2.2.3. Homogeneous structure with control of load injection 48 2.2.4. Silicon direct bonding-IGBT 50 2.3. Assembly technology 52 2.4. Thermal aspect 53 2.4.1. Thermal impedance 55 2.5. Applications fields 57 2.5.1. IGBT power modules for electric traction applications 55 2.5.2. IPM for lowand medium-power applications 60 3. Monolithic Integration 63 3.1. Functional integration and smart power 63 3.2. Transition from low-voltage technology (CMOS) to high voltage 64 3.2.1. Introduction 64 3.2.2. A typical CMOS technology 74 3.2.3. Breakdown voltage of a microelectronics structure 75 3.2.4. Improved junctions breakdown by guard techniques 80 3.2.5. Improvement using electrical insulation techniques 85 3.2.6. Review of the main MOS devices for high-voltage integrated circuits 87 3.3. Combining analog and digital (mixed) 94 3.3.1. Analog: basic functional blocks in CMOS technology and basic 94 3.3.2. Reminder on the general structure of the operational amplifier 100 3.3.3. Digital 108 3.3.4. The notion of codesign 108 3.3.5. Assessment 111 4. Technology for Simulating Power Integrated Systems 113 4.1. Introduction 113 4.2. Hardware and software design of engine control 114 4.2.1. Functional specification 117 4.2.2. Exploring the space of solutions: the partitioned specification model 118 4.2.3. Mixed synthesis, hardware and software code 119 4.2.4. Model functional testing 122 4.2.5. Synthesis of the approach and related tools of the functional 123 4.3. Proposed design stream: related tools 124 4.3.1. Accuracy 125 4.3.2. Resources and system architecture 125 4.3.3. Realization 132 4.4. Conclusion 135 5. 3D Electrothermal Integration 137 5.1. Introduction 137 5.2. Electrothermal modeling of substrate 138 5.2.1. Brief introduction to mathematical tools 139 5.2.2. Simulation results by using Green/TLM 144 5.2.3. Thermal management in a 3D-integrated figure 158 5.2.4. Thermo-mechanical design 168 5.2.5. Thermal modeling of the connectors 169 5.3. Heat analysis for 3D ICs 169 5.3.1. 3D IC heat transfer compact model without TSVs 169 5.3.2. IC model for analyzing the temperature of the chip of the top 171 5.3.3. 3D IC thermal modeling result 173 5.3.4. Electrothermal (ET) modeling of very large scale circuits 178 5.3.5. Electrical modeling of very large scale 179 5.3.6. Thermal modeling of very large scale circuits 182 5.3.7. Electrothermal modeling of very large scale circuits 183 5.4. Conclusion 196 5.5. Heat pipe 197 5.6. Conclusion 215 6. Substrate Coupling in Smart Power Integration 217 6.1. Introduction 217 6.2. Part I: smart power integration using the DTI technique 217 6.2.1. DTI technology 217 6.2.2 DTI structure 218 6.2.3. LDMOSFET performance with DTI 219 6.2.4. Parasitic suppression in 2D smart power ICs with deep trench 223 6.2.5. HV dynamic signal impact on CMOS devices 227 6.2.6. Mixed-mode CMOS-substrate coupling simulation 239 6.3. Part II: smart power integration using stacked 3D technology 244 6.3.1. From 2D planar integration to 3D integration 217 6.3.2. 3D smart power integration 246 6.3.3. TSV-CMOS mixed-mode coupling 265 6.3.4. Electromagnetic impact of TSV in RF range 276 Conclusion 283 C.1. Conclusions 283 C.2. Future work 285 Appendix: Semiconductor Physical Models 287 A.1. Electron and hole densities 287 A.2. Intrinsic semiconductors 289 A.3. Extrinsic semiconductors 290 A.4. Incomplete ionization 291 A.5. Mobility 296 A.5.1. Temperature dependence 296 A.5.2. Concentration-dependent low-field mobility 297 A.5.3. Dopant concentration dependence 298 A.5.4. High-field saturation 300 A.5.5. Carrier lifetimes and recombination 301 A.5.6. SRH recombination 302 A.5.7. Auger recombination 304 A.5.8. Band-gap narrowing 306 References 311 Index 313 Other titles from iSTE in Energy 317 EULA 321